SQS460EN-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 8A PPAK1212-8
$1.35
Available to order
Reference Price (USD)
3,000+
$0.55350
6,000+
$0.52751
15,000+
$0.50895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SQS460EN-T1_GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SQS460EN-T1_GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 36mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 39W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
STMicroelectronics
STP8N120K5
IXYS Integrated Circuits Division
CPC3703CTR
Diodes Incorporated
ZXMP4A16GQTC
Panjit International Inc.
PJC7476_R1_00001
onsemi
FDMA430NZ
onsemi
NTD18N06LT4G
Diodes Incorporated
ZVN4525E6TA
IXYS
IXFN80N50Q3
NXP USA Inc.
BUK751R6-30E,127
Renesas Electronics America Inc