SQS840CENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 12A PPAK 1212-8W
$0.76
Available to order
Reference Price (USD)
1+
$0.76000
500+
$0.7524
1000+
$0.7448
1500+
$0.7372
2000+
$0.7296
2500+
$0.722
Exquisite packaging
Discount
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Meet the SQS840CENW-T1_GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SQS840CENW-T1_GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 33W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8W
- Package / Case: PowerPAK® 1212-8W
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