RM4435
Rectron USA
Rectron USA
MOSFET P-CH 30V 9.1A/11A 8SOP
$0.14
Available to order
Reference Price (USD)
1+
$0.14000
500+
$0.1386
1000+
$0.1372
1500+
$0.1358
2000+
$0.1344
2500+
$0.133
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RM4435 from Rectron USA redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RM4435 offers the precision and reliability you need. Trust Rectron USA to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
STMicroelectronics
STD130N6F7
Infineon Technologies
SPB03N60C3ATMA1
Infineon Technologies
IPB025N10N3GE8187ATMA1
Diodes Incorporated
DMN2080UCB4-7
IXYS
IXTU01N100
Vishay Siliconix
IRF530PBF-BE3
Vishay Siliconix
IRFR420APBF
Vishay Siliconix
IRFU430APBF
Vishay Siliconix
SI7110DN-T1-E3
Rohm Semiconductor