SS1FN6-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO219AB
$0.06
Available to order
Reference Price (USD)
30,000+
$0.05700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the SS1FN6-M3/I single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The SS1FN6-M3/I is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's SS1FN6-M3/I for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 60 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Rohm Semiconductor
RB501VM-40TE-17
Global Power Technology-GPT
G3S12002A
Diodes Incorporated
MURS4100C
SMC Diode Solutions
MBR1660
Microchip Technology
UES2604HR2
Panjit International Inc.
SB54AFC-AU_R1_000A1
Diotec Semiconductor
S2W
SMC Diode Solutions
SK36
Nexperia USA Inc.
PMEG3010ET,215
Vishay General Semiconductor - Diodes Division