SSM3J46CTB(TPL3)
Toshiba Semiconductor and Storage

Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2A CST3B
$0.40
Available to order
Reference Price (USD)
10,000+
$0.10005
30,000+
$0.09660
Exquisite packaging
Discount
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Optimize your power electronics with the SSM3J46CTB(TPL3) single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SSM3J46CTB(TPL3) combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: CST3B
- Package / Case: 3-SMD, No Lead