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SSM3J46CTB(TPL3)

Toshiba Semiconductor and Storage
SSM3J46CTB(TPL3) Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 2A CST3B
$0.40
Available to order
Reference Price (USD)
10,000+
$0.10005
30,000+
$0.09660
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 103mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST3B
  • Package / Case: 3-SMD, No Lead

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