SSM6J212FE,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 4A ES6
$0.48
Available to order
Reference Price (USD)
4,000+
$0.15500
8,000+
$0.14500
12,000+
$0.14000
Exquisite packaging
Discount
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Optimize your power electronics with the SSM6J212FE,LF single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SSM6J212FE,LF combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 40.7mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
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