SSM6J502NU,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 6A 6UDFNB
$0.50
Available to order
Reference Price (USD)
3,000+
$0.21700
6,000+
$0.20300
15,000+
$0.19600
Exquisite packaging
Discount
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The SSM6J502NU,LF from Toshiba Semiconductor and Storage redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SSM6J502NU,LF offers the precision and reliability you need. Trust Toshiba Semiconductor and Storage to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 23.1mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-UDFNB (2x2)
- Package / Case: 6-WDFN Exposed Pad
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