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SSM6J771G,LF

Toshiba Semiconductor and Storage
SSM6J771G,LF Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 5A 6WCSP
$0.70
Available to order
Reference Price (USD)
3,000+
$0.24650
6,000+
$0.23800
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8.5V
  • Rds On (Max) @ Id, Vgs: 31mOhm @ 3A, 8.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: -
  • Package / Case: 6-UFBGA, WLCSP

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