SST4118 SOT-23 3L
Linear Integrated Systems, Inc.

Linear Integrated Systems, Inc.
ULTRA HIGH INPUT IMPEDANCE N-CHA
$3.93
Available to order
Reference Price (USD)
1+
$3.93000
500+
$3.8907
1000+
$3.8514
1500+
$3.8121
2000+
$3.7728
2500+
$3.7335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Linear Integrated Systems, Inc.'s SST4118 SOT-23 3L sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The SST4118 SOT-23 3L also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3