SST4119 SOT-23 3L
Linear Integrated Systems, Inc.
Linear Integrated Systems, Inc.
ULTRA HIGH INPUT IMPEDANCE N-CHA
$3.85
Available to order
Reference Price (USD)
1+
$3.85000
500+
$3.8115
1000+
$3.773
1500+
$3.7345
2000+
$3.696
2500+
$3.6575
Exquisite packaging
Discount
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Linear Integrated Systems, Inc.'s SST4119 SOT-23 3L sets new standards for JFET performance in the Discrete Semiconductor Products market. This depletion-mode field-effect transistor features specially processed silicon for minimal parameter dispersion and maximum yield. The innovative design reduces gate leakage current to femtoampere levels while maintaining fast switching characteristics. Primary applications include nuclear instrumentation, submarine cable repeaters, and satellite communication systems. The SST4119 SOT-23 3L also excels in specialized uses like cryogenic electronics and radiation-hardened circuits. With its gold-metallized contacts and hermetic packaging options, this JFET is the preferred choice for mission-critical applications in extreme environments.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): -
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: -
- Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 300 mW
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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