STB100N6F7
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 100A D2PAK
$2.01
Available to order
Reference Price (USD)
1,000+
$1.20488
2,000+
$1.13063
5,000+
$1.09350
10,000+
$1.07325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STB100N6F7 single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STB100N6F7 combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMP3130L-7
onsemi
NTMFS4108NT1G
Renesas Electronics America Inc
RJK03B7DPA-00#J53
onsemi
FDS4141
onsemi
NTD6600N-1G
Renesas Electronics America Inc
NP50P03YDG-E1-AY
Infineon Technologies
IPB45N04S4L-08
Infineon Technologies
IPP139N08N3GXKSA1
STMicroelectronics
STW7NK90Z
Rohm Semiconductor