NTD6600N-1G
onsemi
onsemi
MOSFET N-CH 100V 12A IPAK
$0.41
Available to order
Reference Price (USD)
1+
$0.41000
500+
$0.4059
1000+
$0.4018
1500+
$0.3977
2000+
$0.3936
2500+
$0.3895
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTD6600N-1G from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTD6600N-1G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 146mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 56.6W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Renesas Electronics America Inc
NP50P03YDG-E1-AY
Infineon Technologies
IPB45N04S4L-08
Infineon Technologies
IPP139N08N3GXKSA1
STMicroelectronics
STW7NK90Z
Rohm Semiconductor
SCT4062KEHRC11
Infineon Technologies
BSO051N03MSGXUMA1
Infineon Technologies
IPP330P10NMAKSA1
Nexperia USA Inc.
PMV33UPE,215
Rohm Semiconductor
R6515ENXC7G
Renesas Electronics America Inc