Shopping cart

Subtotal: $0.00

STB30N65M5

STMicroelectronics
STB30N65M5 Preview
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
$7.22
Available to order
Reference Price (USD)
1,000+
$3.08000
2,000+
$2.92600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 140W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Fairchild Semiconductor

FDS4072N7

Toshiba Semiconductor and Storage

TPH7R506NH,L1Q

Infineon Technologies

BSZ040N04LSGATMA1

Fairchild Semiconductor

FQU10N20TU

Infineon Technologies

BSC077N12NS3GATMA1

Infineon Technologies

IRFS7762TRLPBF

Infineon Technologies

AUIRFR5305TR

Diotec Semiconductor

DI048N04PT-AQ

Vishay Siliconix

SIHA15N60E-E3

Infineon Technologies

IRF100B202

Top