STD4NK60Z-1
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 4A IPAK
$0.96
Available to order
Reference Price (USD)
3,000+
$0.67914
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the STD4NK60Z-1 from STMicroelectronics, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the STD4NK60Z-1 ensures reliable performance in demanding environments. Upgrade your circuit designs with STMicroelectronics's cutting-edge technology today.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Panjit International Inc.
PJQ4416EP_R2_00001
onsemi
NTD4810NH-1G
Linear Integrated Systems, Inc.
SST211 SOT-143 4L
STMicroelectronics
STW50N65DM2AG
IXYS
IXFP56N30X3
Infineon Technologies
BSC018NE2LSIATMA1
onsemi
NTMFS5C456NLT1G
Rohm Semiconductor
RD3U080AAFRATL
Rectron USA
RM100N60T2
Vishay Siliconix