STGWA75H65DFB2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
$6.12
Available to order
Reference Price (USD)
1+
$6.12000
500+
$6.0588
1000+
$5.9976
1500+
$5.9364
2000+
$5.8752
2500+
$5.814
Exquisite packaging
Discount
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Discover the STGWA75H65DFB2 Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGWA75H65DFB2 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGWA75H65DFB2 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 115 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 357 W
- Switching Energy: 1.428mJ (on), 1.05mJ (off)
- Input Type: Standard
- Gate Charge: 207 nC
- Td (on/off) @ 25°C: 28ns/100ns
- Test Condition: 400V, 75A, 2.2Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
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