STGWT60H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 80A 375W TO3P-3L
$5.35
Available to order
Reference Price (USD)
1+
$5.57000
30+
$4.72500
120+
$4.09500
510+
$3.48600
1,020+
$2.94000
2,520+
$2.80000
Exquisite packaging
Discount
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The STGWT60H65DFB by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGWT60H65DFB delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGWT60H65DFB into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 60A
- Power - Max: 375 W
- Switching Energy: 1.09mJ (on), 626µJ (off)
- Input Type: Standard
- Gate Charge: 306 nC
- Td (on/off) @ 25°C: 51ns/160ns
- Test Condition: 400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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