STGWT80H65DFB
STMicroelectronics
STMicroelectronics
IGBT 650V 120A 469W TO3P-3L
$5.17
Available to order
Reference Price (USD)
1+
$7.50000
30+
$6.45767
120+
$5.60700
510+
$4.88251
1,020+
$4.25250
Exquisite packaging
Discount
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Experience top-tier performance with the STGWT80H65DFB Single IGBT transistor from STMicroelectronics. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the STGWT80H65DFB ensures energy efficiency and reliability. Trust STMicroelectronics's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 2.1mJ (on), 1.5mJ (off)
- Input Type: Standard
- Gate Charge: 414 nC
- Td (on/off) @ 25°C: 84ns/280ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): 85 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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