STGP15M120F3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$6.80
Available to order
Reference Price (USD)
1+
$6.80000
500+
$6.732
1000+
$6.664
1500+
$6.596
2000+
$6.528
2500+
$6.46
Exquisite packaging
Discount
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Enhance your electronic projects with the STGP15M120F3 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGP15M120F3 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGP15M120F3 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
- Power - Max: 259 W
- Switching Energy: 550µJ (on), 850µJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 26ns/122ns
- Test Condition: 600V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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