IKD06N60RATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 600V 12A TO252-3
$1.42
Available to order
Reference Price (USD)
2,500+
$0.61284
5,000+
$0.58366
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the IKD06N60RATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKD06N60RATMA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKD06N60RATMA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 12 A
- Current - Collector Pulsed (Icm): 18 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
- Power - Max: 100 W
- Switching Energy: 110µJ (on), 220µJ (off)
- Input Type: Standard
- Gate Charge: 48 nC
- Td (on/off) @ 25°C: 12ns/127ns
- Test Condition: 400V, 6A, 23Ohm, 15V
- Reverse Recovery Time (trr): 68 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
Related Products
Alpha & Omega Semiconductor Inc.
AOTF20B65M1
Infineon Technologies
IKD15N60RBTMA1
onsemi
FGH75T65UPD-F085
STMicroelectronics
STGWA20IH65DF
Infineon Technologies
IKP08N65H5XKSA1
Microchip Technology
APT20GN60BDQ2G
Microchip Technology
APT75GN60LDQ3G
Infineon Technologies
IKY40N120CS6XKSA1
STMicroelectronics
STGWT40H65DFB
IXYS