STGWA20IH65DF
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 20
$2.85
Available to order
Reference Price (USD)
1+
$2.85000
500+
$2.8215
1000+
$2.793
1500+
$2.7645
2000+
$2.736
2500+
$2.7075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the STGWA20IH65DF Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the STGWA20IH65DF delivers consistent and reliable operation. Trust STMicroelectronics's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
- Power - Max: 159 W
- Switching Energy: 110µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: -/120ns
- Test Condition: 400V, 20A, 22Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Infineon Technologies
IKP08N65H5XKSA1
Microchip Technology
APT20GN60BDQ2G
Microchip Technology
APT75GN60LDQ3G
Infineon Technologies
IKY40N120CS6XKSA1
STMicroelectronics
STGWT40H65DFB
IXYS
IXGH60N60C3D1
Rohm Semiconductor
RGT40NS65DGC9
Infineon Technologies
AUIRG4PC40S-E
Rohm Semiconductor
RGTH60TK65GC11
STMicroelectronics