STGW80V60F
STMicroelectronics
STMicroelectronics
IGBT 600V 120A 469W TO247
$6.97
Available to order
Reference Price (USD)
1+
$11.95000
30+
$10.41633
120+
$9.16050
510+
$8.09102
1,020+
$7.16100
Exquisite packaging
Discount
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Optimize your power systems with the STGW80V60F Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the STGW80V60F delivers consistent and reliable operation. Trust STMicroelectronics's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 240 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
- Power - Max: 469 W
- Switching Energy: 1.8mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 448 nC
- Td (on/off) @ 25°C: 60ns/220ns
- Test Condition: 400V, 80A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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