IXYP8N90C3
IXYS
IXYS
IGBT 900V 20A 125W TO220
$2.61
Available to order
Reference Price (USD)
50+
$2.36260
Exquisite packaging
Discount
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Upgrade your power management systems with the IXYP8N90C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IXYP8N90C3 provides reliable and efficient operation. IXYS's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IXYP8N90C3 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 900 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 48 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
- Power - Max: 125 W
- Switching Energy: 460µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 13.3 nC
- Td (on/off) @ 25°C: 16ns/40ns
- Test Condition: 450V, 8A, 30Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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