RGT40NS65DGC9
Rohm Semiconductor
Rohm Semiconductor
IGBT
$3.31
Available to order
Reference Price (USD)
1+
$3.31000
500+
$3.2769
1000+
$3.2438
1500+
$3.2107
2000+
$3.1776
2500+
$3.1445
Exquisite packaging
Discount
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The RGT40NS65DGC9 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGT40NS65DGC9 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGT40NS65DGC9 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 161 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 40 nC
- Td (on/off) @ 25°C: 22ns/75ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: TO-262
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