STH275N8F7-6AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-6
$7.15
Available to order
Reference Price (USD)
1,000+
$2.94100
2,000+
$2.81010
Exquisite packaging
Discount
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The STH275N8F7-6AG from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STH275N8F7-6AG offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 315W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2PAK-6
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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