STI10N62K3
STMicroelectronics
STMicroelectronics
MOSFET N-CH 620V 8.4A I2PAK
$2.07
Available to order
Reference Price (USD)
1+
$2.39000
50+
$1.92780
100+
$1.73500
500+
$1.34942
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STI10N62K3 from STMicroelectronics sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to STMicroelectronics's STI10N62K3 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 620 V
- Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Rectron USA
RM15N650T2
IXYS
IXTH10N100D2
Infineon Technologies
IPD640N06LGBTMA1
Alpha & Omega Semiconductor Inc.
AO3162
Panjit International Inc.
PJMF360N60E1_T0_00001
Infineon Technologies
SPW11N60CFDFKSA1
STMicroelectronics
STU2N62K3
Toshiba Semiconductor and Storage
TJ8S06M3L(T6L1,NQ)
IXYS
IXTN62N50L
Infineon Technologies