STI33N60M6
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 25A I2PAK
$3.19
Available to order
Reference Price (USD)
1+
$3.19112
500+
$3.1592088
1000+
$3.1272976
1500+
$3.0953864
2000+
$3.0634752
2500+
$3.031564
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STI33N60M6 from STMicroelectronics redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the STI33N60M6 offers the precision and reliability you need. Trust STMicroelectronics to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12.5A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.4 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Toshiba Semiconductor and Storage
TK56E12N1,S1X
IXYS
IXTA300N04T2-7
onsemi
FDD7N25LZTM
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJD80G06A-F1-0000
Nexperia USA Inc.
BUK964R4-40B,118
Vishay Siliconix
IRF830BPBF
STMicroelectronics
STD10LN80K5
Vishay Siliconix
SIHB12N60ET1-GE3
onsemi
NTMFS4H01NT1G
Rohm Semiconductor