STLD200N4F6AG
STMicroelectronics
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
$3.73
Available to order
Reference Price (USD)
2,500+
$1.44888
5,000+
$1.40130
Exquisite packaging
Discount
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Meet the STLD200N4F6AG by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STLD200N4F6AG stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerFlat™ (5x6) Dual Side
- Package / Case: 8-PowerWDFN
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