STP10NM60ND
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 8A TO220
$1.75
Available to order
Reference Price (USD)
1+
$3.31000
50+
$2.66760
100+
$2.40080
500+
$1.86726
1,000+
$1.54715
2,500+
$1.44045
5,000+
$1.38710
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the STP10NM60ND from STMicroelectronics, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the STP10NM60ND ensures reliable performance in demanding environments. Upgrade your circuit designs with STMicroelectronics's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 577 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 70W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPS60R600PFD7SAKMA1
Infineon Technologies
IRFR3410TRLPBF
Rohm Semiconductor
R5013ANXFU6
IXYS
IXFP36N20X3M
Infineon Technologies
IPA040N08NM5SXKSA1
NXP USA Inc.
PSMN3R7-25YLC,115
Infineon Technologies
IRFB3006GPBF
Infineon Technologies
BUZ111S
Infineon Technologies
IPDD60R150G7XTMA1
Toshiba Semiconductor and Storage