STW57N65M5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 650V 42A TO247
$13.08
Available to order
Reference Price (USD)
1+
$14.64000
30+
$12.31167
120+
$11.31350
510+
$9.64975
1,020+
$8.85115
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STW57N65M5 by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STW57N65M5 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
STMicroelectronics
STL220N6F7
Texas Instruments
CSD18535KCS
Nexperia USA Inc.
PHB27NQ10T,118
Alpha & Omega Semiconductor Inc.
AO6409A
Nexperia USA Inc.
PMV25ENEAR
Infineon Technologies
IRFR4105TRPBF
Infineon Technologies
IPD60R1K5CEAUMA1
IXYS
IXTN110N20L2
Infineon Technologies
IPB60R040CFD7ATMA1
Toshiba Semiconductor and Storage