SUP70090E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 50A TO220AB
$3.21
Available to order
Reference Price (USD)
1+
$3.50000
10+
$3.13500
100+
$2.59050
500+
$2.11860
1,000+
$1.80400
2,500+
$1.71930
5,000+
$1.65880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SUP70090E-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SUP70090E-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
IXYS
IXFH110N10P
Fairchild Semiconductor
FDD6682_NL
STMicroelectronics
STN2NF10
Vishay Siliconix
SQS423EN-T1_BE3
Infineon Technologies
IPB80N04S3H4ATMA1
Infineon Technologies
BSZ086P03NS3EGATMA1
UnitedSiC
UJ4C075044B7S
Alpha & Omega Semiconductor Inc.
AOD21357
onsemi
FDB088N08
Taiwan Semiconductor Corporation