TBC847B,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.15A SOT23-3
$0.17
Available to order
Reference Price (USD)
3,000+
$0.02945
6,000+
$0.02657
15,000+
$0.02310
30,000+
$0.02079
75,000+
$0.01848
150,000+
$0.01540
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TBC847B,LM Bipolar Junction Transistor (BJT) from Toshiba Semiconductor and Storage, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the TBC847B,LM is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Toshiba Semiconductor and Storage for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 5mA
- Current - Collector Cutoff (Max): 30nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 320 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
Related Products
onsemi
MMJT9435T3
onsemi
2SB1121T-TD-E
Microchip Technology
JANTX2N5683
STMicroelectronics
BUF420AW
Panjit International Inc.
BC857AW-AU_R1_000A1
Infineon Technologies
BCR39PN-E6327
onsemi
2N4403RLRA
Nexperia USA Inc.
2PD601ASL,235
Nexperia USA Inc.
BC850B,235
Fairchild Semiconductor