TIP112 TIN/LEAD
Central Semiconductor Corp
Central Semiconductor Corp
TRANS NPN DARL 100V TO220-3
$0.62
Available to order
Reference Price (USD)
1+
$0.61851
500+
$0.6123249
1000+
$0.6061398
1500+
$0.5999547
2000+
$0.5937696
2500+
$0.5875845
Exquisite packaging
Discount
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Experience unmatched performance with the TIP112 TIN/LEAD Bipolar Junction Transistor (BJT) by Central Semiconductor Corp. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the TIP112 TIN/LEAD delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Central Semiconductor Corp for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
- Power - Max: -
- Frequency - Transition: 25MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
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