TJ40S04M3L(T6L1,NQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 40A DPAK
$0.69
Available to order
Reference Price (USD)
2,000+
$0.63000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TJ40S04M3L(T6L1,NQ single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TJ40S04M3L(T6L1,NQ for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
- Vgs (Max): +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds: 4140 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK+
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
TPH2R003PL,LQ
Taiwan Semiconductor Corporation
BSS84W
STMicroelectronics
STD10NM60ND
Panjit International Inc.
PJQ5426_R2_00001
Vishay Siliconix
SIR403EDP-T1-GE3
IXYS
IXFR32N80Q3
Taiwan Semiconductor Corporation
TSM100N06CZ C0G
Diodes Incorporated
DMT10H025SSS-13
Infineon Technologies
IRF6644TRPBF
onsemi