TK065U65Z,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=270W F=1MHZ
$6.70
Available to order
Reference Price (USD)
1+
$6.70000
500+
$6.633
1000+
$6.566
1500+
$6.499
2000+
$6.432
2500+
$6.365
Exquisite packaging
Discount
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Optimize your power electronics with the TK065U65Z,RQ single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the TK065U65Z,RQ combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.69mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 270W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: TOLL
- Package / Case: 8-PowerSFN
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