TK11A50D(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 500V 11A TO220SIS
$1.92
Available to order
Reference Price (USD)
50+
$1.74260
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the TK11A50D(STA4,Q,M) single MOSFET from Toshiba Semiconductor and Storage. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Toshiba Semiconductor and Storage's TK11A50D(STA4,Q,M) for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SI2318CDS-T1-GE3
Fairchild Semiconductor
FQH90N10V2
Microchip Technology
APT5020BVRG
STMicroelectronics
STP150NF55
Infineon Technologies
IPLK80R900P7ATMA1
onsemi
MPF4391RLRA
Vishay Siliconix
SQJ160EP-T1_GE3
Diodes Incorporated
DMN2056U-13
Nexperia USA Inc.
BUK9M120-100EX
IXYS