TK125V65Z,LQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 24A 5DFN
$4.66
Available to order
Reference Price (USD)
1+
$4.66000
500+
$4.6134
1000+
$4.5668
1500+
$4.5202
2000+
$4.4736
2500+
$4.427
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK125V65Z,LQ by Toshiba Semiconductor and Storage is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the TK125V65Z,LQ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.02mA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 4-DFN-EP (8x8)
- Package / Case: 4-VSFN Exposed Pad
Related Products
Fairchild Semiconductor
FDD6690S
Infineon Technologies
SPD04P10PGBTMA1
STMicroelectronics
STE40NC60
IXYS
IXFN56N90P
Microchip Technology
MIC94051YM4-TR
Renesas Electronics America Inc
UPA2810T1L-E1-AY
Texas Instruments
CSD18540Q5B
onsemi
MGSF3455VT1
Fairchild Semiconductor
IRFS634B_FP001
Micro Commercial Co