TK290P65Y,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 11.5A DPAK
$1.86
Available to order
Reference Price (USD)
2,000+
$0.80360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK290P65Y,RQ by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STW60N65M5
Nexperia USA Inc.
PSMN5R2-60YLX
Infineon Technologies
IRF9321TRPBF
IXYS
IXTQ40N50L2
Microchip Technology
VN2222LL-G
Infineon Technologies
IPI076N12N3GAKSA1
NTE Electronics, Inc
NTE2934
Diodes Incorporated
2N7002A-7
Diodes Incorporated
DMN3071LFR4-7
Nexperia USA Inc.