TK31N60W5,S1VF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 30.8A TO247
$6.74
Available to order
Reference Price (USD)
1+
$6.44000
30+
$5.27867
120+
$4.76375
510+
$3.99125
1,020+
$3.60500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the TK31N60W5,S1VF from Toshiba Semiconductor and Storage, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the TK31N60W5,S1VF ensures reliable performance in demanding environments. Upgrade your circuit designs with Toshiba Semiconductor and Storage's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 30.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 15.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 230W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
IRFR320TRPBF
Fairchild Semiconductor
SFU9220TU
NXP Semiconductors
PMCM4401VPEZ
Infineon Technologies
IPB80N06S4L07ATMA1
Infineon Technologies
IRFTS9342TRPBF
onsemi
NVTYS029N08HTWG
IXYS
IXFN100N65X2
onsemi
NTMFS006N12MCT1G
Alpha & Omega Semiconductor Inc.
AOD2910
Infineon Technologies