TK46E08N1,S1X
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 80V 80A TO220
$1.00
Available to order
Reference Price (USD)
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$1.00100
500+
$0.99099
1000+
$0.98098
1500+
$0.97097
2000+
$0.96096
2500+
$0.95095
Exquisite packaging
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The TK46E08N1,S1X by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.4mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 4V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 103W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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