TK560P60Y,RQ
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CHANNEL 600V 7A DPAK
$1.39
Available to order
Reference Price (USD)
2,000+
$0.53620
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the TK560P60Y,RQ by Toshiba Semiconductor and Storage, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The TK560P60Y,RQ stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Toshiba Semiconductor and Storage.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 560mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SQ2325ES-T1_GE3
Microchip Technology
TP2535N3-G
Fairchild Semiconductor
FQP4N25
onsemi
FDD390N15A
Infineon Technologies
IPB120N04S402ATMA1
Vishay Siliconix
SIHB100N60E-GE3
Infineon Technologies
IRFS4310ZTRLPBF
STMicroelectronics
STW11NK90Z
Vishay Siliconix
SIHF520STRR-GE3
Linear Integrated Systems, Inc.