STW11NK90Z
STMicroelectronics
STMicroelectronics
MOSFET N-CH 900V 9.2A TO247-3
$6.90
Available to order
Reference Price (USD)
1+
$6.71000
30+
$5.39067
120+
$4.91142
510+
$3.97702
1,020+
$3.35412
2,520+
$3.18641
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the STW11NK90Z single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the STW11NK90Z combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 980mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIHF520STRR-GE3
Linear Integrated Systems, Inc.
3N164 TO-72 4L
Toshiba Semiconductor and Storage
TK7J90E,S1E
Nexperia USA Inc.
BUK768R3-60E,118
Taiwan Semiconductor Corporation
TSM032NH04CR RLG
Infineon Technologies
IAUS240N08S5N019ATMA1
Infineon Technologies
IRFB4228PBF
IXYS
IXTK60N50L2
Texas Instruments
CSD13385F5
Wolfspeed, Inc.