TK7J90E,S1E
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 7A TO3P
$2.83
Available to order
Reference Price (USD)
1+
$2.70000
25+
$2.17760
100+
$1.95980
500+
$1.52426
1,000+
$1.26295
2,500+
$1.21940
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK7J90E,S1E single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TK7J90E,S1E is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P(N)
- Package / Case: TO-3P-3, SC-65-3
Related Products
Nexperia USA Inc.
BUK768R3-60E,118
Taiwan Semiconductor Corporation
TSM032NH04CR RLG
Infineon Technologies
IAUS240N08S5N019ATMA1
Infineon Technologies
IRFB4228PBF
IXYS
IXTK60N50L2
Texas Instruments
CSD13385F5
Wolfspeed, Inc.
C3M0045065D
Alpha & Omega Semiconductor Inc.
AON1606
Texas Instruments
CSD23280F3
Renesas Electronics America Inc