TK8A45D(STA4,Q,M)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 450V 8A TO220SIS
$1.42
Available to order
Reference Price (USD)
50+
$1.29360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The TK8A45D(STA4,Q,M) from Toshiba Semiconductor and Storage sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Toshiba Semiconductor and Storage's TK8A45D(STA4,Q,M) for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 450 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 4.4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220SIS
- Package / Case: TO-220-3 Full Pack
Related Products
STMicroelectronics
STL8N6LF6AG
Diodes Incorporated
DMP610DLQ-7
onsemi
FDN5632N-F085
Vishay Siliconix
SIHB12N65E-GE3
onsemi
FDMS7698
Vishay Siliconix
SI2342DS-T1-BE3
onsemi
NVMFS5C420NT1G
Renesas Electronics America Inc
N0602N-S19-AY
Vishay Siliconix
SI2319DS-T1-E3
Vishay Siliconix