TMBT3904,LM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS NPN 50V 0.15A SOT23-3
$0.18
Available to order
Reference Price (USD)
3,000+
$0.03213
6,000+
$0.02898
15,000+
$0.02520
30,000+
$0.02268
75,000+
$0.02016
150,000+
$0.01680
Exquisite packaging
Discount
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Experience unmatched performance with the TMBT3904,LM Bipolar Junction Transistor (BJT) by Toshiba Semiconductor and Storage. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the TMBT3904,LM delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Toshiba Semiconductor and Storage for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 150 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 320 mW
- Frequency - Transition: 300MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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