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TPCF8402(TE85L,F,M

Toshiba Semiconductor and Storage
TPCF8402(TE85L,F,M Preview
Toshiba Semiconductor and Storage
MOSFET N/P-CH 30V 4A/3.2A VS-8
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Specifications

  • Product Status: Obsolete
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A, 3.2A
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
  • Power - Max: 330mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: VS-8 (2.9x1.5)

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