TPN14006NH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N CH 60V 13A 8TSON-ADV
$0.34
Available to order
Reference Price (USD)
5,000+
$0.32200
Exquisite packaging
Discount
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The TPN14006NH,L1Q single MOSFET from Toshiba Semiconductor and Storage is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the TPN14006NH,L1Q is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.1x3.1)
- Package / Case: 8-PowerVDFN
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