TQM033NB04CR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 40V 21A/121A PDFN56U
$4.97
Available to order
Reference Price (USD)
1+
$4.97000
500+
$4.9203
1000+
$4.8706
1500+
$4.8209
2000+
$4.7712
2500+
$4.7215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the TQM033NB04CR RLG by Taiwan Semiconductor Corporation, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the TQM033NB04CR RLG is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 121A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4917 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTD4857NT4G
Panjit International Inc.
PJL9433A_R2_00001
Fairchild Semiconductor
FQP4N20
Infineon Technologies
IPB011N04NGATMA1
Infineon Technologies
IPL60R650P6SATMA1
Infineon Technologies
IPB017N06N3GATMA1
STMicroelectronics
STH130N8F7-2
STMicroelectronics
STP10N62K3
Nexperia USA Inc.
PSMN6R5-30MLDX
Toshiba Semiconductor and Storage