TSM056NH04LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
$3.16
Available to order
Reference Price (USD)
1+
$3.16000
500+
$3.1284
1000+
$3.0968
1500+
$3.0652
2000+
$3.0336
2500+
$3.002
Exquisite packaging
Discount
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The TSM056NH04LCR RLG by Taiwan Semiconductor Corporation is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Taiwan Semiconductor Corporation for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 78.9W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFNU (5x6)
- Package / Case: 8-PowerTDFN
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