TSM110NB04DCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 40V,
$2.72
Available to order
Reference Price (USD)
1+
$2.72000
500+
$2.6928
1000+
$2.6656
1500+
$2.6384
2000+
$2.6112
2500+
$2.584
Exquisite packaging
Discount
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Elevate your electronics with the TSM110NB04DCR RLG from Taiwan Semiconductor Corporation, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the TSM110NB04DCR RLG provides the reliability and efficiency you need. Taiwan Semiconductor Corporation's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 48A (Tc)
- Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1506pF @ 20V
- Power - Max: 2W (Ta), 48W (Tc)
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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