TSM150NB04LDCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DUAL N-CHANNEL POWER MOSFET 40V,
$1.08
Available to order
Reference Price (USD)
1+
$1.08240
500+
$1.071576
1000+
$1.060752
1500+
$1.049928
2000+
$1.039104
2500+
$1.02828
Exquisite packaging
Discount
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Discover the high-performance TSM150NB04LDCR RLG from Taiwan Semiconductor Corporation, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the TSM150NB04LDCR RLG delivers unmatched performance. Trust Taiwan Semiconductor Corporation's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V
- Power - Max: 2W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-PDFN (5x6)
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